aptgl180a120t3ag aptgl180a120t3ag ? rev 2 march, 2011 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 230 i c continuous collector current t c = 100c 180 i cm pulsed collector current t c = 25c 300 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 940 w rbsoa reverse bias safe operating area t j = 125c 300a @ 1100v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 29 13 30 31 32 r1 23 22 28 25 27 26 7 8 3 4 18 16 20 19 14 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 pins 29/30/31/32 must be shorted together pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg pins 16/18/19/20 must be shorted together v ces = 1200v i c = 180a @ tc = 100c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - soft recovery parallel diodes - low diode vf - rbsoa and scsoa rated ? very low stray inductance ? kelvin emitter for easy drive ? internal thermistor for temperature monitoring ? high level of integration ? aln substrate for improved thermal performance benefits ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant phase leg trench + field stop igbt4 power module
aptgl180a120t3ag aptgl180a120t3ag ? rev 2 march, 2011 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 300 a t j = 25c 1.8 2.2 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 150a t j = 150c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 5.5 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 9.3 c oes output capacitance 0.58 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.5 nf q g gate charge v ge = -8v / 15v ; v ce =600v i c =150a 0.85 c t d(on) turn-on delay time 130 t r rise time 20 t d(off) turn-off delay time 300 t f fall time inductive switching (25c) v ge = 15v v ce = 600v i c = 150a r g = 3 45 ns t d(on) turn-on delay time 150 t r rise time 35 t d(off) turn-off delay time 350 t f fall time inductive switching (150c) v ge = 15v v ce = 600v i c = 150a r g = 3 80 ns e on turn-on switching energy t j = 150c 13.5 mj e off turn-off switching energy v ge = 15v v ce = 600v i c = 150a r g = 3 t j = 150c 14.5 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 150c 600 a reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 150 i rm maximum reverse leakage current v r =1200v t j = 125c 600 a i f dc forward current tc = 100c 120 a i f = 120a 2.5 3 i f = 240a 3 v f diode forward voltage i f = 120a t j = 125c 1.8 v t j = 25c 265 t rr reverse recovery time t j = 125c 350 ns t j = 25c 1120 q rr reverse recovery charge i f = 120a v r = 800v di/dt =400a/s t j = 125c 5780 nc
aptgl180a120t3ag aptgl180a120t3ag ? rev 2 march, 2011 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.16 r thjc junction to case thermal resistance diode 0.37 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
aptgl180a120t3ag aptgl180a120t3ag ? rev 2 march, 2011 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =150c 0 50 100 150 200 250 300 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =19v v ge =9v 0 50 100 150 200 250 300 01234 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 50 100 150 200 250 300 5 6 7 8 9 10111213 v ge (v) i c (a) energy losses vs collector current eon eoff 0 10 20 30 40 0 50 100 150 200 250 300 i c (a) e (mj) v ce = 600v v ge = 15v r g = 3. ? t j = 150c eon eoff 0 7.5 15 22.5 30 37.5 45 0 5 10 15 20 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 150a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 300 350 0 300 600 900 1200 v ce (v) i c (a) v ge =15v t j =150c r g =3 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
aptgl180a120t3ag aptgl180a120t3ag ? rev 2 march, 2011 www.microsemi.com 5-5 hard switching zcs zvs 0 30 60 90 120 150 180 0 40 80 120 160 200 240 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =3 ? t j =150c tc=75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode forward characteristic of diode t j =25c t j =125c 0 50 100 150 200 250 300 00.511.522.533.5 v f (v) i f (a) microsemi reserves the right to change, without notice, the specifications and info rmation contained herein
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